High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
Identifieur interne : 000373 ( Russie/Analysis ); précédent : 000372; suivant : 000374High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
Auteurs : RBID : Pascal:06-0097385Descripteurs français
- Pascal (Inist)
- Laser semiconducteur, Bande interdite photonique, Matériau laser, Gallium Indium Phosphure, Composé ternaire, Aluminium Gallium Indium Phosphure, Composé quaternaire, Divergence, Puits quantique, Diode laser, Epitaxie, Conception pour fabrication, Rendement quantique, Puissance sortie, Densité courant, Etude expérimentale, AlGaInP, 4255P, 4260J.
English descriptors
- KwdEn :
- Aluminium Gallium Indium Phosphides, Current density, Design for manufacture, Divergences, Epitaxy, Experimental study, Gallium Indium Phosphides, Laser diodes, Laser materials, Output power, Photonic band gap, Quantum wells, Quantum yield, Quaternary compounds, Semiconductor lasers, Ternary compounds.
Abstract
We address design and performance issues of 640-nm-range GaInP-AlGaInP laser diodes based on a longitudinal photonic bandgap crystal (PBC). The all-epitaxial design is based on selective filtering of high-order modes and allows extending of the fundamental mode over a PBC waveguide achieving very large vertical modal spot size. At the same time the robustness of the narrow far-field vertical beam divergence is remarkably high with respect to layer thickness variations. Optimal design ensures that all high-order optical modes show high absolute values of leakage loss (> 30 cm-1), which are order (orders) of magnitude higher than the leakage loss for the fundamental mode. This PBC-induced "resonant tunneling effect" for high-order modes leads to preferential excitation of the fundamental mode and the high-order modes are not excited even at the highest injection current densities. Broad-area (100 μm) devices show vertical beam divergence of 8° (full-width at half-maximum) and lateral beam divergence of 7°-8°. The far-field pattern is circular shaped and stable upon an increase in injection current. Differential quantum efficiency is as high as 85%. Maximum pulsed total optical output power is 20 W for 100-μm-wide stripe lasers with uncoated facets.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence</title><author><name sortKey="Maximov, Mikhail V" uniqKey="Maximov M">Mikhail V. Maximov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</s1><s2>St.Petershurg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</wicri:noRegion></affiliation></author><author><name sortKey="Shernyakov, Yuri M" uniqKey="Shernyakov Y">Yuri M. Shernyakov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</s1><s2>St.Petershurg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</wicri:noRegion></affiliation></author><author><name sortKey="Novikov, Innokenty I" uniqKey="Novikov I">Innokenty I. Novikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</s1><s2>St.Petershurg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</wicri:noRegion></affiliation></author><author><name sortKey="Kuznetsov, Sergey M" uniqKey="Kuznetsov S">Sergey M. Kuznetsov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</s1><s2>St.Petershurg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</wicri:noRegion></affiliation></author><author><name sortKey="Karachinsky, Leonid Ya" uniqKey="Karachinsky L">Leonid Ya. Karachinsky</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</s1><s2>St.Petershurg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</wicri:noRegion></affiliation></author><author><name sortKey="Gordeev, Nikita Yu" uniqKey="Gordeev N">Nikita Yu. Gordeev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</s1><s2>St.Petershurg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</wicri:noRegion></affiliation></author><author><name sortKey="Kalosha, Vladimir P" uniqKey="Kalosha V">Vladimir P. Kalosha</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Fiber Optics Group. Department of Physics, University of Ottawa</s1><s2>Ottawa ON K1N6N5</s2><s3>CAN</s3><sZ>7 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Ottawa ON K1N6N5</wicri:noRegion></affiliation></author><author><name sortKey="Shchukin, Vitaly A" uniqKey="Shchukin V">Vitaly A. Shchukin</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>NL Nanosemiconductor GmbH</s1><s2>44263 Dortmund</s2><s3>DEU</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District d'Arnsberg</region><settlement type="city">Dortmund</settlement></placeName></affiliation></author><author><name sortKey="Ledentsov, Nikolai N" uniqKey="Ledentsov N">Nikolai N. Ledentsov</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>NL Nanosemiconductor GmbH</s1><s2>44263 Dortmund</s2><s3>DEU</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District d'Arnsberg</region><settlement type="city">Dortmund</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0097385</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 06-0097385 INIST</idno><idno type="RBID">Pascal:06-0097385</idno><idno type="wicri:Area/Main/Corpus">009418</idno><idno type="wicri:Area/Main/Repository">009C51</idno><idno type="wicri:Area/Russie/Extraction">000373</idno></publicationStmt><seriesStmt><idno type="ISSN">0018-9197</idno><title level="j" type="abbreviated">IEEE j. quantum electron.</title><title level="j" type="main">IEEE journal of quantum electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Gallium Indium Phosphides</term><term>Current density</term><term>Design for manufacture</term><term>Divergences</term><term>Epitaxy</term><term>Experimental study</term><term>Gallium Indium Phosphides</term><term>Laser diodes</term><term>Laser materials</term><term>Output power</term><term>Photonic band gap</term><term>Quantum wells</term><term>Quantum yield</term><term>Quaternary compounds</term><term>Semiconductor lasers</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term><term>Bande interdite photonique</term><term>Matériau laser</term><term>Gallium Indium Phosphure</term><term>Composé ternaire</term><term>Aluminium Gallium Indium Phosphure</term><term>Composé quaternaire</term><term>Divergence</term><term>Puits quantique</term><term>Diode laser</term><term>Epitaxie</term><term>Conception pour fabrication</term><term>Rendement quantique</term><term>Puissance sortie</term><term>Densité courant</term><term>Etude expérimentale</term><term>AlGaInP</term><term>4255P</term><term>4260J</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We address design and performance issues of 640-nm-range GaInP-AlGaInP laser diodes based on a longitudinal photonic bandgap crystal (PBC). The all-epitaxial design is based on selective filtering of high-order modes and allows extending of the fundamental mode over a PBC waveguide achieving very large vertical modal spot size. At the same time the robustness of the narrow far-field vertical beam divergence is remarkably high with respect to layer thickness variations. Optimal design ensures that all high-order optical modes show high absolute values of leakage loss (> 30 cm<sup>-1</sup>), which are order (orders) of magnitude higher than the leakage loss for the fundamental mode. This PBC-induced "resonant tunneling effect" for high-order modes leads to preferential excitation of the fundamental mode and the high-order modes are not excited even at the highest injection current densities. Broad-area (100 μm) devices show vertical beam divergence of 8° (full-width at half-maximum) and lateral beam divergence of 7°-8°. The far-field pattern is circular shaped and stable upon an increase in injection current. Differential quantum efficiency is as high as 85%. Maximum pulsed total optical output power is 20 W for 100-μm-wide stripe lasers with uncoated facets.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0018-9197</s0></fA01><fA02 i1="01"><s0>IEJQA7</s0></fA02><fA03 i2="1"><s0>IEEE j. quantum electron.</s0></fA03><fA05><s2>41</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence</s1></fA08><fA11 i1="01" i2="1"><s1>MAXIMOV (Mikhail V.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHERNYAKOV (Yuri M.)</s1></fA11><fA11 i1="03" i2="1"><s1>NOVIKOV (Innokenty I.)</s1></fA11><fA11 i1="04" i2="1"><s1>KUZNETSOV (Sergey M.)</s1></fA11><fA11 i1="05" i2="1"><s1>KARACHINSKY (Leonid Ya.)</s1></fA11><fA11 i1="06" i2="1"><s1>GORDEEV (Nikita Yu.)</s1></fA11><fA11 i1="07" i2="1"><s1>KALOSHA (Vladimir P.)</s1></fA11><fA11 i1="08" i2="1"><s1>SHCHUKIN (Vitaly A.)</s1></fA11><fA11 i1="09" i2="1"><s1>LEDENTSOV (Nikolai N.)</s1></fA11><fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Sciences</s1><s2>St.Petershurg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Fiber Optics Group. Department of Physics, University of Ottawa</s1><s2>Ottawa ON K1N6N5</s2><s3>CAN</s3><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>NL Nanosemiconductor GmbH</s1><s2>44263 Dortmund</s2><s3>DEU</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>1341-1348</s1></fA20><fA21><s1>2005</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222K</s2><s5>354000131947670020</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0097385</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE journal of quantum electronics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We address design and performance issues of 640-nm-range GaInP-AlGaInP laser diodes based on a longitudinal photonic bandgap crystal (PBC). The all-epitaxial design is based on selective filtering of high-order modes and allows extending of the fundamental mode over a PBC waveguide achieving very large vertical modal spot size. At the same time the robustness of the narrow far-field vertical beam divergence is remarkably high with respect to layer thickness variations. Optimal design ensures that all high-order optical modes show high absolute values of leakage loss (> 30 cm<sup>-1</sup>), which are order (orders) of magnitude higher than the leakage loss for the fundamental mode. This PBC-induced "resonant tunneling effect" for high-order modes leads to preferential excitation of the fundamental mode and the high-order modes are not excited even at the highest injection current densities. Broad-area (100 μm) devices show vertical beam divergence of 8° (full-width at half-maximum) and lateral beam divergence of 7°-8°. The far-field pattern is circular shaped and stable upon an increase in injection current. Differential quantum efficiency is as high as 85%. 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